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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. * Extremely Low vF * Low Stored Charge, Majority Carrier Conduction * Low Power Loss/High Efficiency Mechanical Characteristics * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case * Shipped in plastic bags, 1000 per bag. * Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number * Polarity: Cathode Indicated by Polarity Band * Marking: 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non-Repetitive Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (2) (VR(equiv) 0.2 VR(dc), TL = 90C, RJA = 80C/W, P.C. Board Mounting, see Note 2, TA = 55C) Ambient Temperature (Rated VR(dc), PF(AV) = 0, RJA = 80C/W) Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, half-wave, single phase 60 Hz, TL = 70C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) Symbol VRRM VRWM VR VRSM VR(RMS) IO 1N5817 20
1N5817 1N5818 1N5819
1N5817 and 1N5819 are Motorola Preferred Devices
SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS
CASE 59-04
1N5818 30
1N5819 40
Unit V
24 14
36 21 1.0
48 28
V V A
TA IFSM
85
80 25 (for one cycle)
75
C A
TJ, Tstg TJ(pk)
-65 to +125 150
C C
THERMAL CHARACTERISTICS (2)
Characteristic Thermal Resistance, Junction to Ambient Symbol RJA Max 80 Unit C/W
ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) (2)
Characteristic Maximum Instantaneous Forward Voltage (1) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) (TL = 25C) (TL = 100C) Symbol vF 1N5817 0.32 0.45 0.75 1.0 10 1N5818 0.33 0.55 0.875 1.0 10 1N5819 0.34 0.6 0.9 1.0 10 Unit V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. (2) Lead Temperature reference is cathode lead 1/32 from case.
IR
mA
Preferred devices are Motorola recommended choices for future use and best overall value. Rev 3
(c)RectifierInc. 1996 Data Motorola, Device
1
1N5817 1N5818 1N5819
NOTE 1 -- DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = TJ(max) - RJAPF(AV) - RJAPR(AV) (1) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RJA = Junction-to-ambient thermal resistance Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) - RJAPR(AV) (2) Substituting equation (2) into equation (1) yields: TA(max) = TR - RJAPF(AV) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115C. The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: (4) VR(equiv) = Vin(PK) x F The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5818 operated in a 12-volt dc supply using a bridge circuit with capacitive filter such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RJA = 80C/W. Step 1. Find VR(equiv). Read F = 0.65 from Table 1, Step 1. Find VR(equiv) = (1.41)(10)(0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 109C Step 1. Find @ VR = 9.2 V and RJA = 80C/W. Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W TR, REFERENCE TEMPERATURE ( C) I(FM) @ = 10 and IF(AV) = 0.5 A. I(AV) Step 4. Find TA(max) from equation (3). Step 4. Find TA(max) = 109 - (80) (0.5) = 69C. **Values given are for the 1N5818. Power is slightly lower for the 1N5817 because of its lower forward voltage, and higher for the 1N5819. 125 TR, REFERENCE TEMPERATURE ( C) 40 115 30 23 TR, REFERENCE TEMPERATURE ( C) 125 40 30 23
115 105 RJA (C/W) = 110 80 60 85
95
75
2.0
3.0
4.0 5.0 7.0 10 VR, DC REVERSE VOLTAGE (VOLTS)
15
20
Figure 1. Maximum Reference Temperature 1N5817
105
RJA (C/W) = 110 80 60
95
85
75
3.0
4.0
5.0 7.0 10 15 20 VR, DC REVERSE VOLTAGE (VOLTS)
30
Figure 2. Maximum Reference Temperature 1N5818
125 40 30 23
115
105
RJA (C/W) = 110 80 60
95
85
75 4.0
5.0
7.0 10 15 20 VR, DC REVERSE VOLTAGE (VOLTS)
30
40
Figure 3. Maximum Reference Temperature 1N5819 Table 1. Values for Factor F
Circuit Load Sine Wave Square Wave
*Note that VR(PK) 2.0 Vin(PK).
Half Wave Resistive 0.5 0.75 Capacitive* 1.3 1.5 Use line to center tap voltage for Vin.
Full Wave, Bridge Resistive 0.5 0.75 Capacitive 0.65 0.75
Full Wave, Center Tapped* Resistive 1.0 1.5 Capacitive 1.3 1.5
2
Rectifier Device Data
1N5817 1N5818 1N5819
R JL, THERMAL RESISTANCE, JUNCTION-TO-LEAD (C/W) 90 80 70 60 MAXIMUM 50 TYPICAL 40 30 20 10 1 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 BOTH LEADS TO HEATSINK, EQUAL LENGTH PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 5.0 3.0 Sine Wave I(FM) = (Resistive Load) 2.0 I(AV) 5 Capacitive 10 1.0 Loads 20 0.7 0.5
{
dc SQUARE WAVE TJ 125C
0.3 0.2 0.1 0.07 0.05
0.2
L, LEAD LENGTH (INCHES)
0.4 0.6 0.8 1.0 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMP)
4.0
Figure 4. Steady-State Thermal Resistance
Figure 5. Forward Power Dissipation 1N5817-19
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k 10k ZJL(t) = ZJL * r(t) tp Ppk t1 Ppk TIME
DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse.
TJL = Ppk * RJL [D + (1 - D) * r(t1 + tp) + r(tp) - r(t1)] where TJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.: r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
Figure 6. Thermal Response
NOTE 2 -- MOUNTING DATA
Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured.
Mounting Method 1 P.C. Board with 1-1/2 x 1-1/2 copper surface. L L
Mounting Method 3 P.C. Board with 1-1/2 x 1-1/2 copper surface. L = 3/8
TYPICAL VALUES FOR RJA IN STILL AIR
Mounting Method 1 2 3 Lead Length, L (in) 1/8 52 67 1/4 65 80 50 1/2 72 87 3/4 85 100 RJA C/W C/W C/W L
Mounting Method 2 L
BOARD GROUND PLANE
VECTOR PIN MOUNTING
Rectifier Device Data
3
1N5817 1N5818 1N5819
NOTE 3 -- THERMAL CIRCUIT MODEL (For heat conduction through the leads)
RS(A) TA(A) TL(A) TC(A) TJ RL(A) RJ(A) RJ(K) PD TC(K) TL(K) RL(K) RS(K) TA(K)
Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RS = Thermal Resistance, Heatsink to Ambient RL = Thermal Resistance, Lead to Heatsink RJ = Thermal Resistance, Junction to Case PD = Power Dissipation
(Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RL = 100C/W/in typically and 120C/W/in maximum RJ = 36C/W typically and 46C/W maximum.
125 IFSM, PEAK SURGE CURRENT (AMP) 115 TL = 70C f = 60 Hz 105 95 85 Surge Applied at Rated Load Conditions 75 1.0 2.0 3.0 20 5.0 7.0 10 NUMBER OF CYCLES 30 40 70 100 1 Cycle
20
10 7.0 i F, INSTANTANEOUS FORWARD CURRENT (AMP) 5.0 3.0 2.0 25C 1.0 0.7 0.5 0.3 0.2 TC = 100C
Figure 8. Maximum Non-Repetitive Surge Current
30 20 I R, REVERSE CURRENT (mA) 15 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.05 0.03 25C 1N5817 1N5818 1N5819 0 4.0 8.0 12 16 20 24 28 32 36 40 100C
TJ = 125C
0.1 0.07 0.05 0.03 0.02 0.1
75C
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Forward Voltage
Figure 9. Typical Reverse Current
4
Rectifier Device Data
1N5817 1N5818 1N5819
NOTE 4 -- HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. 200
C, CAPACITANCE (pF)
100 70 50 30 20 TJ = 25C f = 1.0 MHz 1N5817 1N5818 1N5819
10 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40
Figure 10. Typical Capacitance
Rectifier Device Data
5
1N5817 1N5818 1N5819
PACKAGE DIMENSIONS
B
NOTES: 1. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY. 2. POLARITY DENOTED BY CATHODE BAND. 3. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. MILLIMETERS MIN MAX 5.97 6.60 2.79 3.05 0.76 0.86 27.94 --- INCHES MIN MAX 0.235 0.260 0.110 0.120 0.030 0.034 1.100 ---
K
D
A
DIM A B D K
K
CASE 59-04 ISSUE M
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6
1N5817/D Rectifier Device Data

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